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Fast Recovery Epitaxial Diode (FRED) Module
MEK 350-02 DA
VRRM = 200 V IFAVM = 356 A trr = 150 ns
1
2
3 1
VRSM V 200
VRRM V 200
Type
2
3
MEK 350-02DA
Symbol IFRMS IFAVM yyx IFRM IFSM
Test Conditions TC = 75C TC = 75C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 503 356 1800 2400 2640 2160 2380 28800 29300 23300 23800 -40...+150 -40...+125 110 A A A A A A A A2s A2s A2s A2s C C C W V~ V~
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Features International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873
q q q q q q q
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ Tstg TSmax Ptot VISOL Md dS dA a Weight Symbol IR Test Conditions TVJ = 25C TVJ = 25C TVJ = 125C IF = 150 A; IF = 260 A; VT0 rT RthJH RthJC trr IRM VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM TVJ TVJ TVJ TVJ = 125C = 25C = 125C = 25C TC = 25C 50/60 Hz, RMS t = 1 min IISOL 1 mA t=1s Mounting torque (M6) Terminal connection torque (M6) Creeping distance on surface Strike distance through air Maximum allowable acceleration
875 3000 3600
Applications Antiparallel diode for high frequency switching devices Free wheeling diode in converters and motor control circuits Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
q q q q q
2.25-2.75/20-25 Nm/lb.in. 4.50-5.50/40-48 Nm/lb.in. 12.7 9.6 50 150 mm mm m/s2 g
Advantages High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses
q q q q
Characteristic Values (per diode) typ. max. 3 2 80 0.80 0.98 0.92 1.07 0.53 1.29 0.228 0.143 TVJ = 100C TVJ = 25C TVJ = 100C 150 200 9 15 mA mA mA V V V V V mW K/W K/W ns A A
Dimensions in mm (1 mm = 0.0394")
VF
For power-loss calculations only DC current DC current IF = 300 A VR= 100 V -di/dt = 200 A/ms
x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
(c) 2000 IXYS All rights reserved
1-2
911
MEK 350-02 DA
400 A 350 IF 300 250 200 150 100 50 0 0.0 Qr
3.0
TVJ= 100C C V = 100V R 2.5
IRM 2.0
60 TVJ= 100C A VR = 100V 50 40
TVJ=125C TVJ=25C
1.5 1.0 0.5 0.0 10
IF= 700A IF= 350A IF= 175A
IF= 700A IF= 350A IF= 175A
30 20 10 0
0.4
0.8 VF
1.2 V
100
A/ms 1000 -diF/dt
0
200
400
600 A/ms 1000 800 -diF/dt
Fig. 1 Forward current IF versus voltage drop VF per leg
2.0
Fig. 2 Reverse recovery charge Qr versus -diF/dt
280 ns
Fig. 3 Peak reverse current IRM versus -diF/dt
100 V 90 VFR 70 60 50 80
TVJ= 100C VR = 100V
1.5 Kf 1.0
Qr IRM
trr
240
tfr
TVJ= 125C IF = 350A
4.5 s 4.0 3.5 tfr
200
IF= 700A IF= 350A IF= 175A
VFR
3.0 2.5 2.0 1.5 1.0 0.5
160 0.5 120
40 30 20 10
0.0 0 50 100 TVJ C 150
80 0 200 400 600 A/ms 1000 800 -diF/dt
0 0 400
0.0 800 1200 A/ms diF/dt
Fig. 4 Dynamic parameters Qr, IRM versus junction temperature TVJ
0.25 K/W 0.20
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJS calculation: i 1 2 3 4 Rthi (K/W) 0.002 0.008 0.054 0.164 ti (s) 0.08 0.024 0.112 0.464
0.15 ZthJS thJH 0.10
0.05
0.00 0.001
0.01
0.1
1s
10 t
Fig. 7 Transient thermal impedance junction to heatsink
(c) 2000 IXYS All rights reserved
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